Перегляд вихідного коду сторінки Time. . The Demise And RSL3

""In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature ([http://www.selleckchem.com/products/rsl3.html selleck compound] (F-graphene) was demonstrated to be in the range between 1.6 k��/sq and 1 M��/sq by adjusting [http://www.selleckchem.com/products/ag-221-enasidenib.html AG-221 manufacturer] the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. ""Correlated transmission electron microscopy imaging, electron diffraction, and Raman spectroscopy are used to investigate [https://en.wikipedia.org/wiki/Succimer Succimer] the structure of Si nanowires with planar defects. In addition to plan-view imaging, individual defective nanowires are imaged in axial cross-section at specific locations selected in plan-view imaging. This correlated characterization approach enables definitive identification of complex defect structures that give rise to diffraction patterns that have been misinterpreted in the literature. Conclusive evidence for the 9R Si polytype is presented, and the atomic structure of this phase is correlated with kinematically-forbidden reflections in Si diffraction patterns. Despite striking similarities between imaging and diffraction data from twinned nanowires and the 9R polytype, clear distinctions between the structures can be made.