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(You et al., 2014), the physical mechanism underlying resistive switching in BFO memristors is related with the nonvolatile change of flexible barriers in Ti-containing BFO memristors. Due to voltage application of a LRS writing pulse, fixed Ti donors close to the bottom electrode can effectively trap mobile oxygen vacancies in BFO. The bottom electrode becomes non-rectifying and the BFO memristor is in LRS. On the other hand, when applying the HRS switching pulse, the mobile donors in BFO memristors are redistributed between the top and the bottom electrode. The ROR1 bottom electrode becomes rectifying and the BFO memristor is in HRS. Note that for both writing pulses the Au top electrode remains rectifying. A single writing pulse with an amplitude Vw = +8.0 V and ?8.0 V can be used to switch the BFO memristor into LRS and HRS, respectively. The maximum possible amplitude increases with the thickness of the BFO memristor and decreases with the length of the writing pulse. For a BFO layer thickness of 600 nm and a writing pulse length of 100 ms, the barrier height of the bottom electrode typically starts to change at a writing pulse of amplitude Vw = +3.0 V. Applying a dc voltage below +2.0 V to the BFO memristor does not change the barrier height of the bottom electrode, and the state of the BFO memristor does not change. Therefore, the +2.0 V dc voltage ABT 263 is defined as the reading bias for the 600 nm thick BFO memristor. The ratio between the resistance RHRS in HRS and the resistance RLRS in LRS amounts to RHRS/RLRS = 2770 (Figure ?(Figure1B).1B). For changing the synaptic weight the absolute value of the amplitude Vp of the pre-synaptic and post-synaptic spike has to be larger than the reading bias amplitude +2.0 V (Smerieri et al., 2008; Borghetti et al., 2009; Lai et al., 2009). In our previous work, we used a 500 nm thick BFO layer and an amplitude of 2.3 and 2.0 V for STDP with 60�C80 pairings of pre- and post-synaptic spikes. In this work, we use a 600 nm thick BFO layer and an amplitude Vp of 3.0 V for STDP with single pairing of pre- and post-synaptic spikes. For the potentiating (depressing) spike sequence, the long term potentiation current ILTP (long-term depression current ILTD) decreases exponentially with decreased pulse amplitude in positive (negative) voltage range: ILRS > ILTP (IHRS MK-2206 in vivo a retention test (Figure ?(Figure2A).2A). A single writing pulse of Vw = +8.0 V and ? 8.0 V and a pulse width of tp = 100 ms was used to switch the BFO memristor into LRS and HRS, respectively. The reading currents have been read out with a reading bias of Vr = +2.0 V and are defined as the current of HRS (IHRS) and LRS (ILRS). As shown in Figure ?Figure2A2A the BFO memristor exhibits degradation of the LRS within the testing time of 2 h. No significant change has been observed for HRS during the retention time of 5 h.