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Furthermore, there are no influences of interface states taken into account that might give rise to additional space charges and barriers. If we consider a narrow band gap, p-type semiconductor 1, and a wide gap, n-type semiconductor 2, the J�CV characteristics can be written as [9] Here the partial voltage decrease over semiconductor 1 and 2 is given by V 1 and V 2. If we consider a p�Cn heterojunction, where V bi,1 > ��E C, there is no barrier for the charge carriers in semiconductor 1 to reach the semiconductor 2 and the equation can ZD6474 price be reformulated as [10] with [11] Here the assumption is made that the current is limited by the rate at which holes can diffuse in the narrow band gap material. X is the fraction of those carriers having sufficient energy to cross the barrier, a is the junction area and N V , 2 is the effective density of states of the valence band for the semiconductor 2. This leads to a J�CV curve of similar form to the ideal Shockley equation curve. Up to this point, no other transport mechanisms such as tunneling through the interface barrier, recombination at the interface, check details or a voltage-dependent barrier height have been taken into account. If these processes are relevant for the J�CV characteristics, the temperature-dependent J S (the exponential prefactor in Eq. 10) can be written as: [12] where E B is the effective energy barrier for the transport across the interface and n is the ideality factor described below. Photovoltaic effect Under illumination, additional charge carriers are generated and are separated in the electric field of the SCR, resulting in a photocurrent. The typical parameters characterizing the TRIB1 photovoltaic effect in solar cells are the short-circuit current density, J SC, and the open circuit voltage, V OC. The analysis of the temperature dependence of these parameters gives additional information about the electronic structure of the p�Cn interface and the transport mechanism across the interface. In inorganic junctions, the temperature dependence of the open circuit voltage is given by [13] for J S