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An attempt of CGS/CIS quantum well growth on GaAs (001) bepotastine has been reported using metal-organic vapor phase epitaxy (MOVPE),5 where an appreciable interdiffusion between In and Ga at the CGS/CIS interface were detected. Because of the interdiffusion, the bandgap energy of the quantum well increased to over 1.2 eV. On the other hand, CGS shows high excitonic binding energy of approximately 20 meV because of its relatively large electron effective mass of 0.14 m0 and low refractive index of 2.14.6,7 In addition, high hole mobility has been reported in these material.8 In order to explore new applications of CIS, CGS and CIGS, we have investigated fundamental characteristics of these materials and their heterostructures. Even though chalcopyrite material has a high density of defects and being classified as ordered defect compound (ODC), we employed migration-enhanced epitaxy (MEE) method to control the defect formation process. The most serious problem of this material system in developing new devices such as those done in III-V compound semiconductors, is the difficulty in growing n-type materials. One of our research http://www.selleckchem.com/products/AZD2281(Olaparib).html objectives was to fabricate n-type chalcopyrite materials. Although we have obtained high resistive material, n-type conductivity has never been achieved. Thus, we propose a new approach which is modulation-doped structure using CGS/CI(G)S heterojunctions or superlattices (SLs), where sample growth was performed using non-equilibrium method MBE/MEE. In the SL structure, quantum well and barrier would be CIS and CGS, respectively. Considering the large ��EC in CGS/CIS quantum wells as shown in Fig. ?Fig.1,1, electrons in the deep donors of barriers are expected to be activated into the conduction band of CIS, which would contribute to n-type conductivity. In our previous study of doping in CGS, Si and Zn produce donor levels with depths of 30-50 meV (Ref. 9) as shown in Fig. ?Fig.1.1. If the modulation doped structure mentioned above works successfully, and n-type conductivity is achieved, new application field will be opened in the chalcopyrite materials. It can be also applicable to solar cells. In this case, pn junction solar cells without lattice mismatch at the interface unlike CGS/CdS can be achieved. If interface issues are eliminated, dramatic Y-27632 increase in the solar cell efficiency can be achieved. FIG. 1. Band alignment of CGS/CIS double heterostructure. CIS, CGS and CIS/CGS, CGS/CIS heterostructures have been grown by a solid source molecular beam epitaxy (MBE). Since the lattice constants of CIS and CGS (5.784 ? and 5.614 ?, respectively) are very close to that of GaAs (5.653 ?), we employed GaAs (001) substrates. The migration enhanced epitaxy (MEE) deposition sequence often yields better quality epitaxial layers rather than conventional MBE deposition.