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The 250�C500 ��m thick two-side mechanically polished wafers have surface roughnesses of less than 20 nm. For wafer No. 4 [35], complicated Epigenetics Compound Library projections of different morphology sectors grown from a seed and metallic inclusions were also observed. The octahedral sectors dominate in wafers No. 4 and No. 7 [35], while the internal cube growth morphology sectors of small areas were resolved. The superposition/intersection of several cube and octahedral sectors were revealed within a central area of wafer No. 4 [35] located above a seed. Pressed copper electrodes, compatible with micro-strip line formed on printed circuit board (PCB), or two-component silver (Ag) and copper (Cu) metallization were employed to fabricate parallel-plate capacitor-type sensor structures (Figure 1). These structures with different type electrodes were examined in order to clarify the impact of diamond surface states and the role of carrier traps in appearance of the dynamic polarization effect. Figure 1 A sketch of slicing of the HPHT diamond crystal and a picture of the micro-pixel (isle type) contacts deposited on the wafer sample No. 5. The cross-sections of the capacitor type sensors made of diamond wafers covered by metallic electrodes are also ... A mosaic electrode system has additionally been made on the sample No. 5 (Figure 1) of the HPHT wafer set, which contains a rather large concentration of metallic inclusions. This wafer sample was thicker, d = 748 ��m. Isle (micro-pixel)-type electrodes of dimensions of 200 �� 200 ��m2 were produced by implantation of boron (B) proceeded by annealing under vacuum. These 200 BMS 777607 ��m step contact isles covering the entire surface of wafer sample were employed for the characterization of micro-pixel electrodes. The linear current-voltage dependence for each single micro-pixel was obtained for applied voltages of up to a few hundred volts over all the set of micro-pixels within the wafer planar surface, while dark current values varied in the range Evodiamine from a few fA to a pA. These variations have been ascribed to the lateral distribution of impurities spread within the bulk of this wafer [35], where current variations correlated well with carrier lifetime lateral maps on the wafer surface. These B implanted contacts showed rather good stability and were resistant to thermal and chemical treatments. Then, pressed copper electrodes or two-layer metal electrodes (Figure 1) were applied to form a parallel-plate capacitor type sensor on this (No. 5) HPHT diamond sample. Capacitor type structures on HPHT wafer samples No. 4, No. 7 and No. 9 (Figure 1) using pressed plate electrodes (Figure 2) were made for comparison. These capacitor type structures were also formed in such a geometry so as to be compatible with a strip-line printed circuit board (PCB) dimensions (inset of Figure 2a), exploited in measurements of the injected charge current transients.